Category: Ammonia (Gas)
7N Electronic Grade Ammonia
Main content≥99.99999%
Impurity gas content <0.01PPM
Product grade 7N
Main applications: Manufacture of semiconductor materials such as wafers, photoresists, films, etc. It can also be used for cleaning of semiconductor equipment and pipelines.
1. Chemical Vapor Deposition (CVD): Electronic grade ammonia is used as a nitrogen source for depositing nitride films, such as silicon nitride (Si₃N₄), aluminum nitride (AlN) and so on, which are widely used in insulating layers, protective layers and conductive materials.
2. Cleaning and etching: Ammonia can be used to clean organic and metal impurities on the wafer surface, and combined with other gases in the etching process to remove the surface oxide layer.
3. Nitrogen doping: Ammonia is used as a nitrogen source for ion implantation and doping processes to change the electrical properties of semiconductor materials.
Electronic grade ammonia is a key material in optoelectronics manufacturing, used in semiconductor lighting, liquid crystal display panels and solar cell production. It is used in the MOCVD (Metal Organic Chemical Vapor Deposition) process for the preparation of materials such as gallium nitride. In new display technologies such as OLED and MiniLED, electronic grade ammonia is used for material growth and surface treatment to ensure the optical properties of products.
In the manufacture of lithium-ion batteries and fuel cells, electronic grade ammonia is used in the preparation of electrode materials and surface treatment to improve battery performance and safety. With the development of hydrogen energy industry, electronic grade ammonia shows great application potential as an important source of hydrogen.
Electronic grade ammonia can also be used in fine chemicals, such as catalyst production, pharmaceutical intermediates synthesis
|
7N Electronic Grade Ammonia Product Technical Specification
|
||
|
Item/Component
|
|
Content
|
|
Ammonia (NH3) purity (v/v)/10-2
|
≥ |
99.99999 |
|
Hydrogen (H2) content (volume fraction)/10-6
|
＜ |
0.01 |
|
Oxygen + Argon (O2+Ar) content (volume fraction)/10-6
|
＜ |
0.01 |
|
Nitrogen (N2) content (volume fraction)/10-6
|
＜ |
0.01 |
|
Carbon monoxide (CO) content (volume fraction)/10-6
|
＜ |
0.01 |
|
Carbon dioxide (CO2) content (volume fraction)/10-6
|
＜ |
0.01 |
|
Hydrocarbon (C1~C3) content (volume fraction)/10-6
|
＜ |
0.01 |
|
Moisture (H2O) content (v/v) /10-6
|
＜ |
0.01 |
|
Total impurity content (v/v) /10-6
|
≤ |
0.1 |
|
7N Electronic Grade Ammonia Heavy Metal Impurity Technical Specifications
|
|||
|
Heavy metal content/10-6(mass fraction) |
|
vapor phase (chemistry)
|
liquid phase (chemistry)
|
|
Antimony (Sb)
|
＜ |
0.005 |
0.005 |
|
Cadmium (Cd)
|
＜ |
0.001 |
0.001 |
|
Calcium (Ca)
|
＜ |
0.01 |
0.05 |
|
Chromium (Cr)
|
＜ |
0.001 |
0.005 |
|
Cobalt (Co)
|
＜ |
0.001 |
0.001 |
|
Copper (Cu)
|
＜ |
0.005 |
0.01 |
|
Gallium (Ga)
|
＜ |
0.001 |
0.01 |
|
Tellurium (Te)
|
＜ |
0.005 |
0.01 |
|
Lead (Pb)
|
＜ |
0.001 |
0.001 |
|
Lithium (Li)
|
＜ |
0.001 |
0.001 |
|
Magnesium (Mg)
|
＜ |
0.001 |
0.005 |
|
Manganese (Mn)
|
＜ |
0.001 |
0.005 |
|
Molybdenum (Mo)
|
＜ |
0.001 |
0.001 |
|
Nickel (Ni)
|
＜ |
0.001 |
0.01 |
|
Potassium (K)
|
＜ |
0.001 |
0.001 |
|
Silicon (Si)
|
＜ |
0.01 |
0.05 |
|
Sodium (Na)
|
＜ |
0.005 |
0.01 |
|
Tin (Sn)
|
＜ |
0.001 |
0.005 |
|
Zinc (Zn)
|
＜ |
0.005 |
0.01 |
|
Arsenic (As)
|
＜ |
0.001 |
0.005 |
|
Germanium (Ge)
|
＜ |
0.001 |
0.005 |
|
Iron (Fe)
|
＜ |
0.005 |
0.01 |
|
Phosphorus (P)
|
＜ |
0.005 |
0.01 |
